The objective of the proposed research is to further our understanding of spin polarization dynamics in the silicon vacancy in silicon carbide under applied vector dc fields for vector magnetometry. Current spin polarization dynamics models are still under investigation and models do not include the effects of vector magnetic fields. The proposed research experimentally isolates the steady state spin polarization and fits the results to a theoretical model to extract fundamental constants of the system at room temperature. Furthermore, these measurements provide the basis for a novel transverse field magnetometry method. Current methods suffer from low contrasts, limited dynamic range, and poor compensation field optimization topologies. We build a simulator based on experimental data and noise to enable efficient development of magnetometry algorithms.