Speaker: Dr. Jiahui Yuan
Date: Tuesday, April 7, 2026
Time: 11:00 AM - 12:00 PM
Location: Pettit Microelectronics Building, 102A&B Conference Room
Host: Dr. John Cressler

Title: NAND Flash Memory: Past, Present, and Future

Abstract: The world runs on data, and much of that data is stored in NAND flash memory. From smartphones and laptops to massive AI data centers, this technology quietly powers the modern digital ecosystem.

In this talk, we’ll explore how NAND flash evolved from its early planar designs into today’s remarkable 3D architectures that stack hundreds of layers of memory. Along the way, we’ll look at the device physics, circuit innovations, and architectural ideas that have enabled flash memory to keep scaling while delivering ever higher density and lower cost.

We’ll also look forward. As artificial intelligence drives explosive data growth, storage technologies are being reimagined to support new computing models. Emerging ideas such as High Bandwidth Flash and AI-optimized storage architectures point to an exciting future where storage plays a much more active role in computing systems.

For students interested in device engineering, circuits, or computer architecture, NAND flash offers a fascinating example of how deep technical innovation continues to shape the infrastructure behind the AI era.

Biography: Dr. Jiahui Yuan received his B.S. in Electrical Engineering from Tsinghua University, where he also completed a minor in English. He earned his M.S. and Ph.D. from the School of Electrical and Computer Engineering at the Georgia Institute of Technology, conducting research on SiGe heterojunction bipolar transistors (HBTs) under the supervision of Professor John Cressler. During his doctoral studies with the SiGe research group, he was awarded the IEEE Electron Devices Society (EDS) Ph.D. Student Fellowship.
In 2010, Dr. Yuan joined SanDisk, where he has contributed to the development of advanced NAND flash memory technologies, leading device engineering for several key programs. He served as the device lead for the technology that enabled SanDisk’s first retail and OEM shipments of 3D NAND, as well as the company’s first shipment of QLC products. Dr. Yuan was named the company’s Inventor of the Year in 2023 and holds more than 170 U.S. patents issued or pending.