The objective of the proposed research is to develop high performance, modular electronic devices that can be implemented in additively manufactured electronic circuits. The resource-intensive nature of traditional electronics fabrication presents a hurdle to prototyping and innovation for those without access to sophisticated foundries. Despite significant advances in printed electronics over the past decade, their performance still lags behind traditional silicon technology. The modular approach presented in this work enables customizable circuit development while retaining some of the attributes of printed electronics like scalability and cost-effectiveness. This work investigates the parameters that impact the performance of MOSFETs fabricated using epitaxially grown Si nanowires to enable bottom-up device development. Traditional, top-down, fabricated RRAM devices are also modularized to enable heterogenous integration in application specific integrated circuits (ASICs). Further investigations will also be made to improve the performance of the modular RRAM devices. Overall, the proposed work aims to develop high quality modular electronic devices which can then be heterogeneously integrated in additively manufactured circuits.