The objective of the proposed research is to investigate zeroth-order numerical optimization strategies applied to the computational design and simulation of high speed SiGe HBTs. The work is to be carried out largely in the context of commercial Technology Computer Aided Design (TCAD) tools. These tools solve systems of partial differential equations that model the physics describing modern semiconducting devices. The proposed research is to use existing TCAD tools as a surrogate to investigate device phenomena via black-box optimization. In addition to completed work the proposed research goals are as follows: 1) Investigate the accuracy of standard numerical models of breakdown and avalanche generation at cryogenic temperatures, 2) Investigate the efficacy of common of black-box optimization algorithms on various common problems in device profile design, and 3) Investigate best practices and numerical methods for the cryogenic simulation of SiGe HBT’s.