The objective of this research is to characterize and optimize the synthesis and fabrication processes of lithium niobium oxide memristive devices for use in neuromorphic circuitry and create a process by which future CMOS integration is possible. Current memristive technologies face many challenges in both fabrication and implementation in full neuromorphic systems. Sputtering, a traditional semiconductor fabrication technique, can be used to deposit memristive lithium niobium oxide films that show large resistance changes, analog programming, and flexible temporal memory characteristics. By using a commonly available semiconductor fabrication technique these devices have the potential to be implemented in current CMOS-implemented neuromorphic circuits allowing for greater flexibility in exploring novel neuromorphic systems. The synthesis design space will be defined for the lithium niobium oxide system and optimized to produce analog memristors showing temporal memory characteristics ranging from volatile, non-volatile, and degrees in between. Once deposited, post processing techniques have been explored to assess the viability of integrating the lithium niobium oxide films into traditional CMOS technologies. Temporal responses of memristive devices have been explored by changing device geometry and composition to investigate if the response times of devices can be tuned. Once fabricated, these devices were placed into circuits to create adaptable neuromorphic circuitry.