The objective of the proposed research is to design millimeter-wave radio frequency (RF) circuits that demonstrate both broad bandwidth and exceptional performance. This dual achievement poses significant challenges in the millimeter-wave spectrum, mainly due to the intrinsic parasitic capacitance found in transistors and transmission lines. Fortunately, SiGe HBT technology offers low parasitic capacitance and low noise characteristics, making it well-suited for achieving superior performance compared to conventional complementary metal-oxide-semiconductor (CMOS) technology. To explore this potential, our proposal leverages the GlobalFoundries SiGe BiCMOS process to introduce a wideband LC-VCO and frequency multiplier as part of our preliminary research. First, we design the LC-VCO in combination with a doubler, utilizing an innovative Series-Shunt Anti-Parallel (SSAP) SiGe HBT switch. This switch exhibits low parasitic capacitance and a superior quality factor within the LC tank, contributing to enhanced performance. Secondly, we present a wideband frequency doubler employing a symmetrically AC-terminated transformer balun, ensuring both wide bandwidth and high rejection of fundamental and third harmonic frequencies. Looking ahead, our future work includes the development of a wide bandwidth frequency quadrupler, a high-performance frequency doubler and quadrupler, and an ultra wideband Wilkinson power divider/combiner.