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Ph.D. Proposal Oral Exam - Zhiyu Xu

Title:  Development, Fabrication and Characterization of III-Nitride Bipolar Devices: Rectifiers, Avalanche Photodiodes, and Laser Diodes

Committee: 

Dr. Dupuis, Advisor      

Dr. Cai, Chair

Dr. Adibi

Dr. Yoder

Dr. Otte

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Summary

The objective of the proposed research is to develop III-nitride (III-N) based optoelectronic and electronic bipolar devices, mainly focusing on device fabrication and characterization. Different III-N bipolar devices have their specific applications and implementations, nevertheless, fabrication process and characterization approaches share similarities in terms of improving device performance and understanding the III-N device physics. The major focuses of III-N devices discussed in the scope of this proposal are gallium nitride-based vertical p-i-n rectifier, avalanche photodiode, and ultraviolet laser diode.

Details

Friday
Dec 1 2023
02:45pm - 04:45pm

Location: Room W225, Van Leer

In campus calendar: No

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Status

  • Workflow status: Published
  • Created by: Daniela Staiculescu
  • Created: 11/22/2023
  • Modified By: Daniela Staiculescu
  • Modified: 11/22/2023

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