The remarkable properties of 2D h-BN have garnered considerable interest in the field of optoelectronics. Its exceptional thermal and electrical conductivity, high thermal stability, and wide bandgap make it an ideal material candidate for integration in various optoelectronic applications. In this research work, we investigate the potential of 2D h-BN for enhancing the performance characteristics of present-day optoelectronic devices. Specifically, we explore two distinct approaches through which 2D h-BN can be integrated, analyzed, and optimized to enhance device performance. First, we explore the possibility of integrating 2D h-BN in UV-LEDs heterostructure as an electronically active hole injection layer. UV-LEDs have emerged as a promising alternative to traditional sources of UV light due to their lower power consumption, longer lifespan, and higher efficiency. However, they have their own set of challenges, including low output power and the need for a suitable substrate material with high thermal conductivity. The incorporation of 2D h-BN has the potential to overcome these challenges and improve the performance of UV-LEDs. To achieve this objective, in this thesis, we conducted an in depth investigation of the electrical properties of Mg doped h-BN. Our aim was to understand the potential of Mg as a dopant for h-BN by analyzing various material parameters such as resistivity, activation energy, charge carrier type, and mobility. To further enhance our understanding, we examined the electrical characteristics of Mg doped h-BN/Si doped AlGaN heterostructures both experimentally and through device simulations. Additionally, we explored the phenomenon of PPC in h-BN as an alternative to the use of Mg as a dopant. This approach has the potential to produce a persistent presence of charge carriers in the material over an extended period, which would provide higher carrier concentration and simplified method for doping h-BN. Second, h-BN has also been explored as a release layer for InGaN/GaN based μ-LED fabrication. Sapphire substrates used in InGaN/GaN-based μ-LEDs can be difficult and expensive to remove during device fabrication, but h-BN has been found to be an effective release layer, making the process more simple, cost-effective and efficient. Additionally, it facilitates the reuse of sapphire substrates, making the entire device fabrication process more economical and attractive for commercialization in the industry.