The objective of the proposed research is to develop computationally efficient and accurate circuit models for emerging ferroelectric devices and explore the pathways of integrating them in memory circuits. For that purpose, we have developed a generalized and fast multidomain phase-field based compact model for the metal-ferroelectric-metal (MFM) capacitor. Time-dependent Landau-Ginzburg (TDGL) and Poisson’s equations are solved self-consistently to model the polarization dynamics. Besides, empirical relationships for voltage-dependent kinetic and gradient energy coefficients are formulated and the physical reasoning behind them is described. After calibrating the model with the experimental results of two most promising ferroelectric materials hafnium zirconium oxide and barium titanate, we plan to do a comprehensive comparison between their performance in memory circuit. Finally, we plan to carry out system level simulations and quantify how much performance enhancement can be achieved by incorporating the ferroelectric memory block at its suitable level in memory hierarchy.