The objective of this research is to examine circuit design methodologies to approach the challenge of designing Silicon-Germanium (SiGe) Heterojunction Bipolar (HBT) Radio-Frequency (RF) circuit components for mm-Wave frequency (30 - 300 GHz). Mm-Wave frequency is desirable for next generations communications standards such as 6G due to the greater available bandwidth enabling vastly higher data rates and radar applications such as automotive radar due to the increased spatial resolution. At mm-Wave frequency such as W-Band (75 - 110 GHz) or D-Band (110 - 170 GHz), SiGe HBT transistor gain starts to collapse as the frequency of operation approaches large fractions of the device current gain cutoff frequency (fT) and atmospheric attenuation at D-Band is several orders of magnitude greater than at sub-6 GHz. These challenges stipulate that novel circuit design techniques be utilized to enhance circuit performance at mm-Wave and massively scaled phased arrays be utilized to overcome the increased path loss at mm-Wave. Therefore, it is desirable that SiGe HBT mm-Wave circuits achieve high performance and low power consumption, compact die are to maximize the performance, form factor of mm-Wave transceivers and phased arrays, respectively.