Title:  Investigation of Metal Modulated Epitaxy Grown III-Nitride High-power Electronic and Optoelectronic Devices

Committee: 

Dr. Doolittle, Advisor    

Dr. Yoder, Chair

Dr. Kippelen

Abstract: The objective of the proposed research is to explore how the 3D phase diagram growth parameters of metal modulated epitaxy grown n-type, p-type, UID, and abrupt selectively controlled semi-insulating III-nitride films impact the performance of III-nitride devices such as PIN diodes and LEDs. The proposed research will require design through analytical solutions in MATLAB, Silvaco Technology Computer Aided Design (TCAD) simulations, MME growth, and device fabrication. First, the 3D phase diagram of MME is comprehensively investigated by extensive studies of growth temperature, III/V ratio and excess Ga-dose per shutter cycle. Next, the semi-insulting nature of GaN:Be films is studied for high power devices by achieving abrupt and selectively controlled Be dopant profiles. Next, homoepitaxially grown III-nitride PIN diodes and potentially other devices such as FETs, and LEDs would be examined through design, modeling and simulations. Finally, various comparative device structures would be grown by MME and fabricated.