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Ph.D. Dissertation Defense - Evan Clinton
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Title: Wide-bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices
Committee:
Dr. Alan Doolittle, ECE, Chair , Advisor
Dr. Bruno Frazier, ECE
Dr. Doug Yoder, ECE
Dr. Arijit Raychowdhury, ECE
Dr. Samuel Graham, ME
Abstract:
The III-nitride semiconductors are a promising material system to explore. There are many applications for the III-nitride materials, most notably in the form of commercial power electronics and optoelectronics, such as the white light emitting diode (LED). In this work, a combination of novel techniques, materials, and devices are explored to enhance III-nitride optoelectronics in a wide range of important wavelengths.
Status
- Workflow status: Published
- Created by: Daniela Staiculescu
- Created: 03/13/2020
- Modified By: Daniela Staiculescu
- Modified: 03/16/2020
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