Title:  Design of III-N Ultraviolet Vertical Cavity Surface Emitting Lasers

Committee: 

Dr. Yoder, Advisor       

Dr. Gaylord, Chair

Dr. Dupuis

Abstract:

The objective of the proposed research is to develop and design a narrow linewidth Vertical Cavity Surface Emitting Laser diode (VCSEL) operating at a wavelength of 369.5 nm for use in chip-scale atomic clocks. Advanced semiconductor device simulation tools have been used for a theoretical study of III-N VCSELs by self-consistent electro-opto-thermal numerical simulations. The proposed study involves designing suitable mirrors (>99% reflectivity), transparent and conductive current spreading layers for lateral hole injection, optimizing charge transport through optimum design of the epitaxial structure including the multiple quantum well active region and electron blocking layers, as well as thermal management strategies to mitigate the deleterious effects of self-heating at the high current densities that III-N VCSELs typically operate at (which can exceed 10 kA/cm^2).