Title:  Hybrid Material and Device Platforms for Next-generation Integrated Nanophotonics

Committee: 

Dr. Adibi, Advisor        

Dr. Ralph, Chair

Dr. Chang

Abstract:

The objective of the proposed research is to investigate and develop novel hybrid material and device platforms beyond single-layer silicon (Si) to enable novel functionalities suitable for integrated nanophotonic devices and systems. In particular, CMOS-compatible integration of ultra-low-loss silicon nitride (SiN) into Si platform has been pursued to reduce linear optical loss, enable high-quality microresonators, improve optical power handling, support various nonlinear phenomena, and thus enable the next-generation of integrated electro-optical nanophotonic devices on a single hybrid-Si chip. The intellectual merit of the proposed discipline is in the platform build up, device design and corresponding fabrication techniques. As will be discussed in details, SiN is a promising platform for a myriad of integrated photonic applications, and its proper integration into Si platform is of theoretical interest and practical merit. The broader impact of such platform development would include, but is not limited to, enabling a universal methodology for dense integration of different materials into Si. Since the envisioned optical fabrication method is a CMOS-compatible fusion bonding technology, it can be readily transferred to other materials, devices, and systems to be integrated with Si on a single chip. The further integration of electronics into the hybrid platform can revolutionize the Si photonics to support compact, high efficiency, and low-power integrated devices and systems.