Abstract: The 4H polytype of silicon carbide (SiC) is a promising candidate for high temperature and high power metal-­‐oxide-­‐semiconductor device applications. It is also used in the formation of graphene on SiC. In such applications high quality surfaces and interfaces are critical. For power MOSFETs  the  limit  to  application  has  been  the  dielectric/SiC  interface  which  gives  rise  to  a  low  inversion layer mobility. This is in sharp contrast to Si/SiO2 interfaces. This talk will describe the work of our team (see below) in characterizing and modifying the interface to raise the mobility by a  factor  of  ~100  in  the  last  10  years.  The  current  mobility  values,  although  adequate  for  commercial devices, remain below expectation and require further research.

Biography: Leonard C. Feldman is Director of the Institute for Advanced Materials, Devices and Nanotechnology at Rutgers University. He also holds academic positions as Professor of Physics and Materials Science and Engineering at Rutgers, and is Emeritus at Vanderbilt University. Feldman received his PhD in Physics in 1967 from Rutgers University. He then served as a Member of Staff at Bell Labs from 1967-1996, his last position as  Head of the Silicon Materials Research Department which carried on early research in the applications of oxy-nitrides, interfaces and Ge/Si structures.

Professor Feldman is a Fellow of the American Physical Society, the American Vacuum Society and the American Association for the Advancement of Science and a Sr. Member of IEEE. In 1999 he was awarded the 1999 David Adler Prize of the APS for research in materials physics.

Co-workers: Auburn University-­J. Williams, S. Dhar; Rutgers MEIS Group-­T. Gustafsson, Can Xu, S. Shubeita, H. Lee; Rutgers Chemistry-­E. Garfunkel, Yi Xu