Title:  New Processes for Heterogeneous Integration of III-Nitride Optoelectronic Devices: Application To InGaN-based Light Emitting Diodes and Solar Cells Grown on 2D h-BN

Committee:

Dr. Jean Paul Salverstrini, ECE, Chair , Advisor

Dr. Abdallah Ougazzaden, ECE

Dr. Paul Voss, ECE

Dr. Shyh-Chiang Shen, ECE

Dr. Nico Declercq, ME

Abstract: Mechanical release and transfer of GaN-based heterostructures using 2D h-BN have undergone considerable development in van der Waals epitaxy of III-Nitride thin-films along with device fabrication and transfer onto various flexible and rigid substrates. The technique consists of a mechanical peeling-off of the epilayers from the native substrate, which allows a dry and fast release and transfer of optoelectronic and electronic III-N devices to arbitrary substrates. However, during the epitaxial growth and device fabrication of the epilayers, delaminations and cracks arise in the structures, which limits the size of crack-free devices to only a few hundreds of squared microns. The goal of this thesis is to develop new efficient, large-scale and low-cost new processes for heterogeneous integration of III-Nitride optoelectronic devices. These processes developed were used to fabricate lateral and vertical InGaN-based LEDs as well as nanopyramid-based InGaN solar cells grown on 2D h-BN. The outcomes of this thesis represent progress towards efficient, robust and low-cost 2D-hBN-assisted lift-off technology for heterogeneous integration of optoelectronic and electronic III-N devices.