Title:  Characterization and Modelling of Anomalous Properties of SiO2, Si3N4 and Al2O3 Nanolaminates

Committee: 

Dr. Davis, Advisor

Dr. Naeemi, Chair

Dr. Bakir

Abstract:

The objective of the proposed research is to demonstrate and model anomalous deviations of the permittivity and dielectric strength of nanolaminate composite materials constructed from a combination of SiO2, Si3N4, and Al2O3. The source of these anomalies in these structures are attributed to the high volumetric density of the interfaces that are present in nanolaminate stacks. Deviations in permittivity are attributed to variations in dipole and bond formations that occur at the interfaces between the laminate layers. Such anomalies have been measured in nanopowder compacts over the last 20 years [1, 2]; however, no systematic study characterizing the average polarizability of these interfacial dipoles for these materials exist in the literature. Moreover, enhancement in the dielectric strength in these nanolaminate structures are attributed to the scattering mechanisms that occur at the interfaces which lead to variations in the mean free path of charge. Thin films have been shown to have an increase in dielectric breakdown strength [3], and micro-laminate films have been used in high voltage and high temperature applications [4-6]; however, no studies of sub-10 nm PECVD-grown laminate structures of these materials have been made to understand the impact on composite dielectric strength, leakage current and breakdown field strength. The overall goal of this investigation is to determine if nanolaminate structures of these high dielectric strength materials that are commonly used in VLSI fabrication can be useful in the construction of compact energy storage devices. The following part of this chapter explains and elaborates on the details of the main goals for the proposed research.