Ph.D. Proposal Oral Exam - Taha Ayari

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  • Date/Time:
    • Friday December 8, 2017
      10:30 am - 12:30 pm
  • Location: Conference Room, GTL
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Summary Sentence: Design ad Fabrication of Nitride-based Solar Cells and Intergration for Tandem Cell

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Title:  Design ad Fabrication of Nitride-based Solar Cells and Intergration for Tandem Cell


Dr. Ougazzaden, Advisor       

Dr. Salvestrini, Chair

Dr. Voss


The objective of the proposed research is to fabricate indium gallium nitride/gallium nitride (InGaN/GaN) photovoltaics devices grown on 2D hexagonal boron nitride (h-BN) by metal-organic vapor phase epitaxy (MOVPE) and their integration into InGaN/Si tandem solar cells. Recent advances in epitaxial growth have led to the Van der Waals epitaxy of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which would allow III-N devices to be used more flexibly in a broader range of applications. The choice of the InN – GaN material system for photovoltaics stems from its energy band gap stretching from 0.78-3.42 eV, which covers the entire visible spectrum. We have developed novel solutions to the problems of phase separation, v-pits, and low quality p-GaN and absorber regions which have resulted in the highest reported peak external quantum efficiency for III-nitride based solar cells. The development of a fabrication process for the InGaN-based solar cells has been also investigated and will be adapted for devices grown on 2D h-BN. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the devices to be mechanically lifted off from the sapphire substrate and directly integrated into an InGaN/Si tandem solar cell. To limit the cracks formation during this step, an elastomeric stamp assisted transfer method will be applied.

Additional Information

In Campus Calendar

ECE Ph.D. Proposal Oral Exams

Invited Audience
Phd proposal, graduate students
  • Created By: Daniela Staiculescu
  • Workflow Status: Published
  • Created On: Dec 1, 2017 - 5:43pm
  • Last Updated: Dec 1, 2017 - 5:43pm