Title:  Hybrid Multi-layer CMOS-compatible Material Platform for High-performance Integrated Nanophotonics

Committee:

Dr. Ali Adibi, Chair, Advisor

Dr. Gee-Kung Chang, ECE

Dr. Muhannad Bakir, ECE

Dr. Benjamin Klein, ECE

Dr. Joseph Perry, CHEM

Abstract:

Optical interconnects are poised to replace wires in short-range communication networks at different levels including processing units in computer clusters, on-board components, processors, and even cores within a processor. With the ever-increasing need for higher data rates, there is an urgent need for new optical communication subsystems and device architectures to achieve these data rates at very low power consumption to avoid any energy dilemma. The objective of this work is to study new material platforms for integrated photonic applications, that could potentially deliver stringent system requirements for future generations of optical interconnects in terms of speed  and power consumption. The different platforms that are studied here are 1) 3-D integration of Si layers; 2) using Silicon Nitride (SiN) as an alternative to Si; 3) using graphene-SiN hybrid material platform.