Title:  Hybrid Multi-layer CMOS-compatible Material Platform for High-performance Integrated Nano-photonics

Committee: 

Dr. Adibi, Advisor        

Dr. Bakir, Chair

Dr. Chang

Abstract:

The objective of this proposal is to address different shortcomings of Si as a material platform for integrated phtonic applications, and propose solutions to improve or to get around them by different means including 3-D integration of Si layers, using SiN as an alternative to Si, and using Graphene-SiN hybrid material platform. High quality wafer bonding technique has been used to develop double-layer Si (potentially multi-layer) material platform. SiN has been used instead of Si to get around issues in Si platform including, high nonlinear coefficients, and high absorption loss at visible wavelengths. Whereas SiN is a very interesting and versatile material platform, especially at visible wavelengths, it suffers from its own set of shortcomings. The limitations of SiN material platform have also been addressed through over-etching bottom oxide cladding with ALD-deposited Alumina as hard mask, and also developing Graphene-SiN hybrid structures to add tuning capability to SiN