{"693790":{"#nid":"693790","#data":{"type":"event","title":"Ph.D. Dissertation Defense - Nahid Shazon","body":[{"value":"\u003Cp\u003E\u003Cstrong\u003ETitle\u003C\/strong\u003E\u003Cem\u003E:\u0026nbsp; Modeling, Optimization, and Co-Design of Emerging Memory Technologies at Advanced Technology Nodes\u003C\/em\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003ECommittee:\u003C\/strong\u003E\u003C\/p\u003E\u003Cp\u003EDr.\u0026nbsp;Azad Naeemi, ECE, Chair, Advisor\u003C\/p\u003E\u003Cp\u003EDr.\u0026nbsp;Jeff Davis, ECE\u003C\/p\u003E\u003Cp\u003EDr.\u0026nbsp;Asif Khan, ECE\u003C\/p\u003E\u003Cp\u003EDr.\u0026nbsp;Shimeng Yu, ECE\u003C\/p\u003E\u003Cp\u003EDr.\u0026nbsp;Eric Vogel, MSE\u003C\/p\u003E","summary":"","format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EThis dissertation presents a multiscale modeling, optimization, and co-design framework for emerging memory technologies at advanced technology nodes, with a primary focus on spin-orbit-torque magnetic random-access memory (SOT-MRAM). A device-level framework is developed to capture nanoscale conduction-current redistribution and the resulting nonuniform spin-current generation in SOT devices, and is subsequently extended to compact two-terminal (2T) SOT-MRAM. For perpendicular-magnetic-anisotropy devices, full-fixed-layer and half-fixed-layer configurations are evaluated to quantify the effects of device geometry, MTJ scaling, and spin-torque efficiencies on write performance, demonstrating that the half-fixed-layer architecture can achieve competitive write energy with reduced out-of-plane spin-torque requirements. The shared read\/write path of 2T SOT-MRAM is further investigated using a circuit-to-micromagnetics read-disturbance framework combining layout-extracted circuit simulations, finite-element current modeling, spin drift-diffusion analysis, and rare-event-enhancement-based micromagnetic simulations. The analysis is also extended to in-plane-magnetic-anisotropy devices using AuPt and \u03b2-W SOT channels, where the half-fixed-layer configuration reduces switching-current density and write energy. These device-level concepts are then incorporated into a hierarchical 2T SOT-MRAM system and evaluated after physical implementation, demonstrating substantial improvements in area, bit density, and read energy-delay-area product relative to a three-terminal baseline. Finally, advanced interconnect technologies are evaluated within a complete 7 nm SRAM RTL-to-GDS flow to establish an optimized conventional-memory reference, showing that BEOL improvements can significantly enhance SRAM performance and energy efficiency.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"Modeling, Optimization, and Co-Design of Emerging Memory Technologies at Advanced Technology Nodes "}],"uid":"28475","created_gmt":"2026-11-04 21:42:53","changed_gmt":"2026-11-04 21:44:14","author":"Daniela Staiculescu","boilerplate_text":"","field_publication":"","field_article_url":"","field_event_time":{"event_time_start":"2026-12-02T14:00:00-05:00","event_time_end":"2026-12-02T16:00:00-05:00","event_time_end_last":"2026-12-02T16:00:00-05:00","gmt_time_start":"2026-12-02 19:00:00","gmt_time_end":"2026-12-02 21:00:00","gmt_time_end_last":"2026-12-02 21:00:00","rrule":null,"timezone":"America\/New_York"},"location":"Room 231A, MiRC","extras":[],"related_links":[{"url":"https:\/\/teams.microsoft.com\/l\/meetup-join\/19%3ameeting_MmY0M2U5OGEtMWQ0YS00NWNiLTlkNjYtMzVmMjA0NWQwYjAy%40thread.v2\/0?context=%7b%22Tid%22%3a%22482198bb-ae7b-4b25-8b7a-6d7f32faa083%22%2c%22Oid%22%3a%22e60e1475-7062-4ac8-9532-083d75f2854b%22%7d","title":"Microsoft Teams Link "}],"groups":[{"id":"434381","name":"ECE Ph.D. Dissertation Defenses"}],"categories":[],"keywords":[{"id":"100811","name":"Phd Defense"},{"id":"1808","name":"graduate students"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[{"id":"1788","name":"Other\/Miscellaneous"}],"invited_audience":[{"id":"78771","name":"Public"}],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}}}