{"686756":{"#nid":"686756","#data":{"type":"event","title":"Ph.D. Proposal Oral Exam - Prasanna Venkat Ravindran","body":[{"value":"\u003Cp\u003E\u003Cstrong\u003ETitle:\u0026nbsp; \u003C\/strong\u003E\u003Cem\u003EPhase transitions and negative capacitance in fluorite and perovskite-structure ferroelectrics\u003C\/em\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003ECommittee:\u003C\/strong\u003E\u003C\/p\u003E\u003Cp\u003EDr. Khan, Advisor\u003C\/p\u003E\u003Cp\u003EDr. Naeemi, Chair\u003C\/p\u003E\u003Cp\u003EDr. Bassiri-Gharb\u003C\/p\u003E","summary":"","format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EThe objective of the proposed research is to engineer ferroelectric gate stacks for high-performance, high-density 3D NAND storage solutions. Artificial intelligence (AI) is generating unprecedented volumes of data, with machine-generated content surpassing human-generated data by more than 100-fold in 2025. Managing this data explosion requires advances in digital storage technologies that go beyond the limits of existing solutions. Traditional NAND flash memory, which plays a central role in sustaining AI data flows alongside high-bandwidth memory (HBM), is now approaching fundamental scaling barriers as devices near the 1000-layer milestone and exceed 40 trillion transistors. To continue meeting density, reliability, and efficiency requirements, new materials and architectures are essential. Hafnia-based ferroelectric materials present a promising pathway, offering fast switching, non-volatile states, and CMOS compatibility suitable for integration into 3D NAND. Recent progress in engineering ferroelectric field-effect transistors (FEFETs) demonstrates that challenges such as disturb and retention can be mitigated through material and device-level innovations. By engineering device performance and reliability metrics, we position ferroelectric NAND (FE-NAND) as a breakthrough solution to extend scaling beyond the limits of charge-trap NAND and provide the storage capabilities demanded by the AI-driven era.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"Ferroelectric Heterostructures for Vertical NAND Flash Applications"}],"uid":"28475","created_gmt":"2025-12-05 13:02:54","changed_gmt":"2025-12-05 13:13:26","author":"Daniela Staiculescu","boilerplate_text":"","field_publication":"","field_article_url":"","field_event_time":{"event_time_start":"2025-12-16T12:00:00-05:00","event_time_end":"2025-12-16T14:00:00-05:00","event_time_end_last":"2025-12-16T14:00:00-05:00","gmt_time_start":"2025-12-16 17:00:00","gmt_time_end":"2025-12-16 19:00:00","gmt_time_end_last":"2025-12-16 19:00:00","rrule":null,"timezone":"America\/New_York"},"location":"Room 102A, MiRC","extras":[],"related_links":[{"url":"https:\/\/teams.microsoft.com\/l\/meetup-join\/19%3ameeting_Y2YyYzcwYjQtNWE2NC00ZGI1LWI2ODQtYTAyZjE5NzI5MDgx%40thread.v2\/0?context=%7b%22Tid%22%3a%22482198bb-ae7b-4b25-8b7a-6d7f32faa083%22%2c%22Oid%22%3a%2271f6203a-c1ef-4dc2-bf6d-f76a9fa723a1%22%7d","title":"Microsoft Teams Meeting link"}],"groups":[{"id":"434371","name":"ECE Ph.D. Proposal Oral Exams"}],"categories":[],"keywords":[{"id":"102851","name":"Phd proposal"},{"id":"1808","name":"graduate students"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[{"id":"1788","name":"Other\/Miscellaneous"}],"invited_audience":[{"id":"78771","name":"Public"}],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}}}