{"685725":{"#nid":"685725","#data":{"type":"event","title":"Ph.D. Proposal Oral Exam - Nashrah Afroze","body":[{"value":"\u003Cp\u003E\u003Cstrong\u003ETitle:\u0026nbsp; \u003C\/strong\u003E\u003Cem\u003EThermal Reliability with Oxygen reservoir layer and Atomic-Scale Insights in Fluorite ferroelectrics for memory-on-logic applications\u003C\/em\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003ECommittee:\u0026nbsp;\u003C\/strong\u003E\u003C\/p\u003E\u003Cp\u003EDr.\u0026nbsp;Khan, Advisor\u0026nbsp;\u003C\/p\u003E\u003Cp\u003EDr. Yu, Chair\u003C\/p\u003E\u003Cp\u003EDr. Datta\u003C\/p\u003E","summary":"","format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EThe objective of this study is to advance ferroelectric memory for AI-era, memory-bound systems by uniting interface engineering with atomic-scale characterization. Motivated by growing bottlenecks in capacity, bandwidth, and reliability, we focus on ferroelectric devices and demonstrate that inserting an ultrathin WO3-x oxygen-reservoir layer at the ferroelectric\/electrode interface activates a thermally driven self-healing mechanism that markedly improves endurance. By tuning the oxygen content of WO3-x, we further achieve nearly wake-up-free operation at 125\u02daC\u2014the JEDEC qualifying temperature for 3D integration\u2014while preserving the orthorhombic ferroelectric phase under thermal stress, in agreement with first-principles predictions. Complementing these device-level advances, plan-view scanning transmission electron microscopy directly visualizes nanoscale polarization textures in ultrathin ferroelectrics, revealing sub-nanometer ferroelectric domains bounded by alternating head-to-head and tail-to-tail 180\u02da domain walls. These highly charged walls map the dipolar self-organization landscape that governs polarization switching in HfO\u2082-based ferroelectrics. Collectively, the results establish a materials-todevices pathway for reliable, high-temperature, wake-up-free ferroelectric operation and provide micro-to-macro insight that informs process\/design co-optimization for nonvolatile tiers (e.g., Fe-NAND, FeRAM, FeFETs) in memory-on-logic architectures.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"Thermal Reliability with Oxygen reservoir layer and Atomic-Scale Insights in Fluorite ferroelectrics for memory-on-logic applications"}],"uid":"28475","created_gmt":"2025-10-15 21:06:10","changed_gmt":"2025-10-15 21:07:20","author":"Daniela Staiculescu","boilerplate_text":"","field_publication":"","field_article_url":"","field_event_time":{"event_time_start":"2025-10-16T15:00:00-04:00","event_time_end":"2025-10-16T17:00:00-04:00","event_time_end_last":"2025-10-16T17:00:00-04:00","gmt_time_start":"2025-10-16 19:00:00","gmt_time_end":"2025-10-16 21:00:00","gmt_time_end_last":"2025-10-16 21:00:00","rrule":null,"timezone":"America\/New_York"},"location":"Room 231A, MiRC","extras":[],"related_links":[{"url":"https:\/\/teams.microsoft.com\/l\/meetup-join\/19%3ameeting_YjI1MDMxM2UtYjBlYi00YWUzLWE2OTktZmY4OWQ3MWJmNjcx%40thread.v2\/0?context=%7b%22Tid%22%3a%22482198bb-ae7b-4b25-8b7a-6d7f32faa083%22%2c%22Oid%22%3a%22caac1375-b515-4160-8f2d-e92b36099b24%22%7d","title":"Microsoft Teams Meeting link"}],"groups":[{"id":"434371","name":"ECE Ph.D. Proposal Oral Exams"}],"categories":[],"keywords":[{"id":"100811","name":"Phd Defense"},{"id":"1808","name":"graduate students"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[{"id":"1788","name":"Other\/Miscellaneous"}],"invited_audience":[{"id":"78771","name":"Public"}],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}}}