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  <title><![CDATA[Ph.D. Dissertation Defense - Keeya Madani]]></title>
  <body><![CDATA[<p><strong>Title</strong><em>:&nbsp; Development and Fabrication of High Efficiency N-Type Tunnel Oxide Passivated Silicon Solar Cells with APCVD, Ion Implanted, and BBr3 Boron Emitters</em></p><p><strong>Committee:</strong></p><p>Dr. Ajeet Rohatgi, ECE, Chair, Advisor</p><p>Dr. Thomas Gaylord, ECE</p><p>Dr. Juan-Pablo Correa-Baena, MSE</p><p>Dr. Bruno Frazier, ECE</p><p>Dr. Muhannad Bakir, ECE</p>]]></body>
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      <value><![CDATA[Development and Fabrication of High Efficiency N-Type Tunnel Oxide Passivated Silicon Solar Cells with APCVD, Ion Implanted, and BBr3 Boron Emitters ]]></value>
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      <value><![CDATA[<div>This thesis focuses on developing cost-effective, high efficiency (~23%) n-type silicon solar cells utilizing tunnel oxide passivated contacts (TOPCon) on rear and optimized boron-doped emitters on front of a n-type Si wafer. Incorporating an ultra-thin tunnel oxide capped with doped poly-Si significantly reduces minority carrier recombination in the doped and metallized regions, enhancing efficiency without increasing costs. This research involves solar cell modelling, design, fabrication, and characterization of commercial-ready n-TOPCon solar cells. It also covers fundamental silicon solar cell principles, characterization tools, and a literature review on technology trends. First, a technology roadmap was developed with Quokka 2 device modelling to improve the baseline n-type p+/n/n+ PERT cell efficiency from 20.5% to 23% through a combination of front side boron emitter optimization, development and integration of rear side n-TOPCon, and improved screen-printed metal contacts. Three different B diffusion technologies, including APCVD, ion implantation, and BBr3 were investigated, optimized, and integrated into cell processing.</div><div>&nbsp;</div><div>Fabrication of large-area n-TOPCon cells resulted in 23.3% efficiency with BBr3 emitter followed by 22.7% for ion implantation and 22.2% for APCVD emitters. Detailed device characterization and modelling was performed on these cells to identify and quantify the loss mechanisms in these cells and a new technology roadmap is proposed to take n-TOPCon cell efficiencies to &gt;= 25% by using higher quality Si wafers, ultra-high sheet resistance emitters, and improved metallization techniques. The research successfully developed high efficiency (~23%) commercial-ready n-TOPCon cells, setting a foundation for making photovoltaics the cheapest electricity source.</div>]]></value>
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      <value><![CDATA[2025-04-07T15:00:00-04:00]]></value>
      <value2><![CDATA[2025-04-07T17:00:00-04:00]]></value2>
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      <timezone><![CDATA[America/New_York]]></timezone>
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      <value><![CDATA[Room W218, Van Leer]]></value>
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          <item><![CDATA[ECE Ph.D. Dissertation Defenses]]></item>
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        <value><![CDATA[Other/Miscellaneous]]></value>
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        <value><![CDATA[Phd Defense]]></value>
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