{"679802":{"#nid":"679802","#data":{"type":"news","title":"Fernandes Awarded IEEE Electron Devices Society Masters Student Fellowship","body":[{"value":"\u003Cp\u003EGeorgia Tech \u003Ca href=\u0022https:\/\/ece.gatech.edu\/\u0022\u003ESchool of Electrical and Computer Engineering\u003C\/a\u003E (ECE) graduate student Lance Fernandes was awarded the IEEE Electron Devices Society\u2019s Masters Student Fellowship.\u003C\/p\u003E\u003Cp\u003EThe selective one-year fellowship is awarded to just three students around the world, with only one recipient typically coming from the Americas. The grant aims to promote, recognize, and support graduate master\u2019s level study and research within the field of electron and ion-based devices.\u003C\/p\u003E\u003Cp\u003EFernandes\u2019s research focuses on the fabrication and characterization of novel and emerging semiconductor technologies for memory and logic applications, with an emphasis on ferroelectric materials for achieving high density and high performance.\u003C\/p\u003E\u003Cp\u003EWith this fellowship, he aims to advance his research on the use of ferroelectric materials to enhance the performance and storage capabilities of 3D NAND-Flash, a key technology in modern non-volatile memory.\u003C\/p\u003E\u003Cp\u003EFernandes, who is advised by ECE Associate Professor \u003Ca href=\u0022https:\/\/ece.gatech.edu\/directory\/asif-islam-khan\u0022\u003EAsif Khan\u003C\/a\u003E, is particularly passionate about exploring new materials and methods to optimize non-volatile memory technology, aiming to push the boundaries of performance, reliability, and scalability in this field.\u003C\/p\u003E\u003Cp\u003EHis current projects seek to improve the endurance and data retention of memory devices by investigating new schemes and materials, with the goal of paving the way for the next generation of high-performance memory technology.\u003C\/p\u003E","summary":"","format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EThe graduate student plans to use the fellowship to advance research on integrating ferroelectric materials into 3D NAND flash technology for non-volatile memory applications.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"The graduate student plans to use the fellowship to advance research on integrating ferroelectric materials into 3D NAND flash technology for non-volatile memory applications."}],"uid":"36558","created_gmt":"2025-01-22 17:56:25","changed_gmt":"2025-01-22 17:57:08","author":"zwiniecki3","boilerplate_text":"","field_publication":"","field_article_url":"","location":"Atlanta, GA","dateline":{"date":"2025-01-22T00:00:00-05:00","iso_date":"2025-01-22T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"676087":{"id":"676087","type":"image","title":"Fernandes.jpg","body":null,"created":"1737568599","gmt_created":"2025-01-22 17:56:39","changed":"1737568599","gmt_changed":"2025-01-22 17:56:39","alt":"Lance Fernandes","file":{"fid":"259802","name":"Fernandes.jpg","image_path":"\/sites\/default\/files\/2025\/01\/22\/Fernandes.jpg","image_full_path":"http:\/\/hg.gatech.edu\/\/sites\/default\/files\/2025\/01\/22\/Fernandes.jpg","mime":"image\/jpeg","size":558305,"path_740":"http:\/\/hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/2025\/01\/22\/Fernandes.jpg?itok=Ahl_eUS_"}}},"media_ids":["676087"],"groups":[{"id":"1255","name":"School of Electrical and Computer Engineering"}],"categories":[{"id":"145","name":"Engineering"}],"keywords":[{"id":"99481","name":"IEEE Electron Devices Society"},{"id":"368","name":"Fellowship"}],"core_research_areas":[{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EZachary Winiecki\u003C\/p\u003E","format":"limited_html"}],"email":["zwiniecki3@gatech.edu"],"slides":[],"orientation":[],"userdata":""}}}