{"675170":{"#nid":"675170","#data":{"type":"news","title":"Afroze Wins Best Presentation at JUMP 2.0 SUPREME Annual Review","body":[{"value":"\u003Cp\u003EGeorgia Tech \u003Ca href=\u0022https:\/\/ece.gatech.edu\/\u0022\u003ESchool of Electrical and Computer Engineering\u003C\/a\u003E (ECE) third-year Ph.D. candidate Nashrah Afroze won the Best Presentation Award at the \u003Ca href=\u0022https:\/\/supreme.cornell.edu\/\u0022\u003ESuperior Energy-efficient Materials and Devices Center\u2019s\u003C\/a\u003E (SUPREME) Annual Review on June 11-12 in Cambridge, Mass. on the campus of the Massachusetts Institute of Technology.\u003C\/p\u003E\u003Cp\u003EShe won the award for her research, \u0022Interface Engineering for High-Performance Memories at Elevated Temperatures,\u0022 which aims to improve memory robustness at high temperatures.\u003C\/p\u003E\u003Cp\u003EEmerging memories are essential for AI applications due to their substantial memory demands. These memories must function reliably at elevated temperatures, such as high bandwidth memory operating at 105 degrees C, monolithic back end at 125 degrees C, and automotive applications at 160 degrees C.\u003C\/p\u003E\u003Cp\u003EEnsuring robustness at these high temperatures is crucial for maintaining performance and reliability.\u003C\/p\u003E\u003Cp\u003EAt the event, Afroze demonstrated an interface engineering method to enhance the robustness of these memories at elevated temperatures, ensuring their effectiveness under realistic temperature conditions.\u003C\/p\u003E\u003Cp\u003E\u201cAttending the JUMP 2.0 SUPREME annual meeting in Cambridge was truly remarkable,\u201d Afroze said. \u201cEngaging with top semiconductor researchers from both academia and industry was incredibly inspiring. I\u0027m grateful for the insights and connections gained, shaping my vision for future advancements in technology.\u201d\u003C\/p\u003E\u003Cp\u003EThe SUPREME center, led by Cornell University, is one of the seven \u003Ca href=\u0022https:\/\/www.src.org\/program\/jump2\/\u0022\u003EJoint University Microelectronics Program\u003C\/a\u003E (JUMP) 2.0 academic research centers co-sponsored by \u003Ca href=\u0022https:\/\/www.src.org\/\u0022\u003ESemiconductor Research Corporation\u2019s\u003C\/a\u003E (SRC).\u003C\/p\u003E\u003Cp\u003EIt aims to demonstrate the basic materials and technology breakthroughs needed to address the seismic shifts identified by the semiconductor community in the Decadal Plan for Semiconductors.\u003C\/p\u003E\u003Cp\u003EAfroze is a third-year Ph.D. candidate under the supervision of ECE associate professor \u003Ca href=\u0022https:\/\/ece.gatech.edu\/directory\/asif-islam-khan\u0022\u003EAsif Islam Khan\u003C\/a\u003E, who is part of the SUPREME Center team.\u003C\/p\u003E\u003Cp\u003EHer research interests encompass a comprehensive study of ferroelectric memories, from microstructure analysis to electrical characterization, aiming to advance the understanding and application of the ferroelectric materials in next-generation memory technologies.\u003C\/p\u003E","summary":"","format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EThe third-year ECE Ph.D. student was recognized for her research on improving memory robustness at high temperatures.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"The third-year ECE Ph.D. student was recognized for her research on improving memory robustness at high temperatures."}],"uid":"36558","created_gmt":"2024-06-20 20:13:07","changed_gmt":"2024-06-21 16:58:30","author":"zwiniecki3","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2024-06-20T00:00:00-04:00","iso_date":"2024-06-20T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"674225":{"id":"674225","type":"image","title":"afroze.jpg","body":null,"created":"1718988990","gmt_created":"2024-06-21 16:56:30","changed":"1718988990","gmt_changed":"2024-06-21 16:56:30","alt":"Nashrah Afroze","file":{"fid":"257715","name":"afroze.jpg","image_path":"\/sites\/default\/files\/2024\/06\/21\/afroze_0.jpg","image_full_path":"http:\/\/hg.gatech.edu\/\/sites\/default\/files\/2024\/06\/21\/afroze_0.jpg","mime":"image\/jpeg","size":717490,"path_740":"http:\/\/hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/2024\/06\/21\/afroze_0.jpg?itok=rIJBeBst"}}},"media_ids":["674225"],"groups":[{"id":"1255","name":"School of Electrical and Computer Engineering"}],"categories":[{"id":"145","name":"Engineering"}],"keywords":[{"id":"191818","name":"JUMP 2.0"},{"id":"193807","name":"SUPREME"},{"id":"1228","name":"memory"},{"id":"7510","name":"temperature"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EZachary Winiecki\u003C\/p\u003E","format":"limited_html"}],"email":["zwiniecki3@gatech.edu"],"slides":[],"orientation":[],"userdata":""}}}