{"673023":{"#nid":"673023","#data":{"type":"news","title":"Marshall and Matthews Recognized for Aluminum Nitride Semiconductor Research ","body":[{"value":"\u003Cp\u003EGeorgia Institute of Technology electrical and computer engineering \u0026nbsp;students Emily Marshall and Chris Matthews each earned Best Student Awards at the \u003Ca href=\u0022https:\/\/icns14.jp\/\u0022\u003EInternational Conference on Nitride Semiconductors\u003C\/a\u003E in Fukuoka, Japan on November 17, 2023.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EMarshall, who is pursuing her M.S. and Ph.D. in ECE, received the award for her talk \u0022Pushing the Limits of Low-Temperature Growth of Improved-Quality ScAlN Via Metal-Rich Epitaxy,\u201d and Matthews, a recent ECE Ph.D. graduate, for his talk \u201cSurface Oxide Removal on AlN Substrates via Low Temperature Aluminum Flashing.\u201d\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe conference featured over 1,200 participants and 400 presentations. Marshall and Matthews were among just a handful of students to have their research recognized.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EMarshall\u2019s talk presented her team\u2019s prior success with growing improved-quality scandium aluminium nitride (ScAlN) and observations of a ScAIN coverage dependent and substrate temperature dependent scandium (Sc) catalytic effect. It also emphasized the importance of Marshall\u2019s current research in quantifying the Sc catalytic effect to improve ScAlN films and devices.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThey both conducted their research in \u003Ca href=\u0022https:\/\/ece.gatech.edu\/directory\/william-alan-doolittle\u0022\u003EProfessor Alan Doolittle\u003C\/a\u003E\u2019s \u003Ca href=\u0022https:\/\/alan.ece.gatech.edu\/ASTF\/Files%20for%20Upload\/index.htm\u0022\u003EAdvanced Semiconductor Technology Facility\u003C\/a\u003E. The main focus of the lab is the advancement of semiconductor technology.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003ETheir current research utilizes molecular beam epitaxy (MBE) to grow films, uniquely using metal modulated epitaxy (MME), a specialized technique of MBE developed by the group that helps them to precisely control the buildup of metal film on the surface of the samples. This process creates higher-quality films at low temperatures.\u0026nbsp;\u003C\/p\u003E\r\n","summary":"","format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EThe ECE students won Best Student Awards at the International Conference on Nitride Semiconductors in Fukuoka, Japan in November.\u003C\/p\u003E\r\n","format":"limited_html"}],"field_summary_sentence":[{"value":"The ECE students won Best Student Awards at the International Conference on Nitride Semiconductors in Fukuoka, Japan in November."}],"uid":"36558","created_gmt":"2024-02-16 15:18:59","changed_gmt":"2024-02-16 15:57:42","author":"zwiniecki3","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2024-02-16T00:00:00-05:00","iso_date":"2024-02-16T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"673118":{"id":"673118","type":"image","title":"Untitled-1.jpg","body":null,"created":"1708096395","gmt_created":"2024-02-16 15:13:15","changed":"1708096375","gmt_changed":"2024-02-16 15:12:55","alt":"Emily Marshall and Chris Matthews","file":{"fid":"256474","name":"Untitled-1.jpg","image_path":"\/sites\/default\/files\/2024\/02\/16\/Untitled-1.jpg","image_full_path":"http:\/\/hg.gatech.edu\/\/sites\/default\/files\/2024\/02\/16\/Untitled-1.jpg","mime":"image\/jpeg","size":1072629,"path_740":"http:\/\/hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/2024\/02\/16\/Untitled-1.jpg?itok=KxATB8Ef"}}},"media_ids":["673118"],"groups":[{"id":"1255","name":"School of Electrical and Computer Engineering"}],"categories":[{"id":"145","name":"Engineering"},{"id":"135","name":"Research"},{"id":"8862","name":"Student Research"}],"keywords":[{"id":"167609","name":"semiconductor"},{"id":"101","name":"Award"},{"id":"182931","name":"International Conference on Nitride Semiconductors"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EZachary Winiecki\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["zwiniecki3@gatech.edu"],"slides":[],"orientation":[],"userdata":""}}}