{"662085":{"#nid":"662085","#data":{"type":"news","title":"Engel Recognized for Semiconductor Research at ICMBE","body":[{"value":"\u003Cp\u003EZachary\u0026nbsp;Engel has won the Best Student Oral Prize at the 2022 International Conference on Molecular Beam Epitaxy (ICMBE). Engel\u0026nbsp;is a Ph.D. candidate in the Georgia Tech School of Electrical and Computer Engineering (ECE) and is part of ECE\u0026rsquo;s Advanced Semiconductor Technology Facility (ASTF) directed by Professor Alan Doolittle.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EICMBE recognized Engel for the quality of his work and presentation excellence on \u0026quot;Demonstration of Sc0.2Al0.8N HEMT structures with a sheet resistance of 150 \u0026Omega;\/\u25a1 and a sheet charge of 5.9x1013 cm-2 with phase pure, metal rich growth.\u0026rdquo;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe research presents new semiconductor chemistries that allow for improved semiconductor quality as demonstrated by a record sheet charge and channel resistance in a next generation replacement for the current champion of power and RF transistors, AlGaN\/GaN transistors. This new device will allow 2.5 times higher current than present technologies. In principle, it can be integrated with ASTF\u0026rsquo;s\u0026nbsp;\u003Ca href=\u0022https:\/\/www.ece.gatech.edu\/news\/659945\/georgia-techs-new-aluminum-nitride-based-semiconductor-poised-transform-industry\u0022\u003Egroundbreaking aluminum nitride-based semiconductor\u003C\/a\u003E, which previous demonstrations have shown to be the largest voltage semiconductor ever created.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThis year\u0026rsquo;s ICMBE was held in Sheffield, United Kingdom from September 4-9. The conference began in 1978 in Paris, France\u0026nbsp;and provides a prominent international forum for reporting new developments in the areas of fundamental and applied molecular beam epitaxy research, including advances in the technique, synthesis of new materials, discovery of new physical properties, formation of novel heterostructures, and the development of innovative devices.\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"The research presents new semiconductor chemistries that allow for improved semiconductor quality."}],"uid":"36172","created_gmt":"2022-10-13 15:41:21","changed_gmt":"2022-10-13 19:15:32","author":"dwatson71","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2022-10-13T00:00:00-04:00","iso_date":"2022-10-13T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"662084":{"id":"662084","type":"image","title":"Zachary, a Ph.D. candidate in the Georgia Tech School of Electrical and Computer Engineering","body":null,"created":"1665675479","gmt_created":"2022-10-13 15:37:59","changed":"1665675479","gmt_changed":"2022-10-13 15:37:59","alt":"Zachary, a Ph.D. candidate in the Georgia Tech School of Electrical and Computer Engineering","file":{"fid":"250779","name":"Zachary Engel_graphic.jpg","image_path":"\/sites\/default\/files\/images\/Zachary%20Engel_graphic.jpg","image_full_path":"http:\/\/hg.gatech.edu\/\/sites\/default\/files\/images\/Zachary%20Engel_graphic.jpg","mime":"image\/jpeg","size":395211,"path_740":"http:\/\/hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Zachary%20Engel_graphic.jpg?itok=oNhM89c3"}}},"media_ids":["662084"],"related_links":[{"url":"https:\/\/iop.eventsair.com\/icmbe2022\/","title":"International Conference on Molecular Beam Epitaxy"},{"url":"https:\/\/alan.ece.gatech.edu","title":"Advanced Semiconductor Technology Facility"}],"groups":[{"id":"1255","name":"School of Electrical and Computer Engineering"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"134","name":"Student and Faculty"},{"id":"8862","name":"Student Research"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"191424","name":"Zachary Engel"},{"id":"191425","name":"International Conference on Molecular Beam Epitaxy"},{"id":"2435","name":"ECE"},{"id":"13090","name":"Advanced Semiconductor Technology Facility"},{"id":"1159","name":"Alan Doolittle"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003E\u003Cstrong\u003EDan Watson\u003C\/strong\u003E\u003Cbr \/\u003E\r\n\u003Ca href=\u0022mailto:dwatson@ece.gatech.edu\u0022\u003Edwatson@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["dwatson@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}}}