{"657052":{"#nid":"657052","#data":{"type":"news","title":"Tasneem Wins IEEE SISC Award for Best Student Paper","body":[{"value":"\u003Cp\u003EECE Ph.D. student Nujhat Tasneem has won the Ed Nicollian Award\u0026nbsp;for best student paper\u0026nbsp;at the Institute of Electrical and Electronics Engineers (IEEE) Semiconductor Interface Specialist Conference (SISC). The event was held in early December 2021 with awards being announced in March 2022.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ETasneem\u0026rsquo;s presentation, \u0026ldquo;Charge Trapping Effects on Memory Window in Ferroelectric Field Effect Transistors,\u0026rdquo; was the highest rated presentation based on the feedback of SISC committee members and invited speakers. She is the first Georgia Tech student to receive the award.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe award-winning paper introduced a novel electrical characterization method to track carrier capture and emission dynamics during write operations in n-type ferroelectric-field-effect transistors (FEFETs). FEFETs are a candidate\u0026nbsp;for high-density, non-volatile, embedded memory applications due to their promise of having low operating voltages\u0026nbsp;and write energies combined with low-leakage, and high-density integration. While significant work has been done to explain the operation and endurance of FEFETs, this research details a superior method of measurement because it provides an understanding of the transport and the status of the ferroelectric.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;This novel characterization method sheds a light on the underlying device physics of FEFETs, which is\u0026nbsp;necessary to optimize its design, especially as a non-volatile memory (NVM) element\u0026rdquo; said Tasneem.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ETasneem is currently part of the The Khan Lab headed by ECE Assistant Professor Asif Khan. The work presented was supported by the ASCENT project (Applications and Systems-driven Center for Energy-Efficient integrated Nano Technologies), one of six centers supported by SRC\u0026rsquo;s Joint University Microelectronics Program (JUMP). Fabrication at Tech was done at the Institute for Electronics and Nanotechnology (IEN), supported by the National Science Foundation- National Nanotechnology Coordinated Infrastructure (NSF-NNCI) program.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe\u0026nbsp;SISC Ed Nicollian Award\u0026nbsp;for best student paper\u0026nbsp;was established in 1995 in honor of Professor E.H. Nicollian, University of North Carolina at Charlotte. Nicollian was a pioneer in the exploration of the metal-oxide-semiconductor system, particularly in the area of electrical measurements. His efforts were fundamental to establishing the SISC in its early years.\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"She is the first Georgia Tech student to receive this Semiconductor Interface Specialist Conference award. "}],"uid":"36172","created_gmt":"2022-04-07 00:05:39","changed_gmt":"2022-04-07 00:09:12","author":"dwatson71","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2022-04-06T00:00:00-04:00","iso_date":"2022-04-06T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"652282":{"id":"652282","type":"image","title":"Nujhat Tasneem, doctoral student in the School of Electrical and Computer Engineering at Georgia Tech","body":null,"created":"1635781867","gmt_created":"2021-11-01 15:51:07","changed":"1635781867","gmt_changed":"2021-11-01 15:51:07","alt":"Nujhat Tasneem, doctoral student in the School of Electrical and Computer Engineering at Georgia Tech","file":{"fid":"247474","name":"Tasneem.Nujhat[35].jpg","image_path":"\/sites\/default\/files\/images\/Tasneem.Nujhat%5B35%5D.jpg","image_full_path":"http:\/\/hg.gatech.edu\/\/sites\/default\/files\/images\/Tasneem.Nujhat%5B35%5D.jpg","mime":"image\/jpeg","size":803370,"path_740":"http:\/\/hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Tasneem.Nujhat%5B35%5D.jpg?itok=ZveOv_ac"}}},"media_ids":["652282"],"related_links":[{"url":"https:\/\/www.ieeesisc.org","title":"Semiconductor Interface Specialist Conference"},{"url":"https:\/\/www.ece.gatech.edu\/","title":"School of Electrical and Computer Engineering"},{"url":"https:\/\/electrons.ece.gatech.edu","title":"The Khan Lab"}],"groups":[{"id":"1255","name":"School of Electrical and Computer Engineering"}],"categories":[{"id":"129","name":"Institute and Campus"}],"keywords":[{"id":"188814","name":"Nujhat Tasneem"},{"id":"1187","name":"IEEE"},{"id":"190321","name":"Semiconductor Interface Specialist Conference"},{"id":"190322","name":"The Khan Lab"},{"id":"178244","name":"Asif Khan"},{"id":"190323","name":"ferroelectric-field-effect transistors"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39461","name":"Manufacturing, Trade, and Logistics"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003E\u003Cstrong\u003EDan Watson\u003C\/strong\u003E\u003Cbr \/\u003E\r\n\u003Ca href=\u0022mailto:dwatson@ece.gatech.edu\u0022\u003Edwatson@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["dwatson@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}}}