Committee: 

Dr. Voss, Advisor

Dr. Salvestrini, Chair

Dr. Ougazzaden

Dr. Barrales-Mora

Abstract: The objective of this proposed research is to investigate, analyze and understand the p-type doping behavior of h-BN. For this purpose, it is important to study the characteristics of the device being fabricated using this unique wide bandgap material. We aim to develop suitable and reliable simulation model for these kinds of devices which will help us to gain an insight into the behavior of this material under varying scenario and conditions. Understanding this behavior is of crucial importance as it will help in designing and optimizing these devices which will open new pathways for application of this technology.