Committee: 

Dr. Doolittle, Advisor

Dr. Yoder, Chair

Dr. Losego

Abstract: The objective of the proposed research is to explore growth kinetics based solutions to overcome limitations in materials used in III-Nitride based devices. The proposed research will address a number of growth-related challenges for AlGaN used in traditional UV LEDs and LDs, as well as investigate a previously understudied material, AlInN, as a replacement for both InGaN and AlGaN in many optical and photovoltaic devices. Further, a method for the formation of relaxed InGaN substrates will be investigated to create a solution for InGaN based LED growth. MME growth of high quality AlInN will be pursued, first at a single composition, then expanding to the entire composition range. Simultaneously, a method for the formation of AlxGa1-xN/AlyGa1-yN (x≠y) self-assembled superlattices (SASL) will be investigated. Finally, AlInN oxidation will be investigated in order to form relaxed InGaN substrates for optical devices.