{"647948":{"#nid":"647948","#data":{"type":"event","title":"Ph.D. Dissertation Defense - Soufiane  Karrakchou","body":[{"value":"\u003Cp\u003E\u003Cstrong\u003ETitle\u003C\/strong\u003E\u003Cem\u003E:\u0026nbsp; \u003C\/em\u003E\u003Cem\u003ENew Processes for Heterogeneous Integration of III-Nitride Optoelectronic Devices: Application To InGaN-based Light Emitting Diodes and Solar Cells Grown on 2D h-BN\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003ECommittee:\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Jean Paul Salverstrini, ECE, Chair , Advisor\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Abdallah Ougazzaden, ECE\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Paul Voss, ECE\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Shyh-Chiang Shen, ECE\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Nico Declercq, ME\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EAbstract: \u003C\/strong\u003EMechanical release and transfer of GaN-based heterostructures using 2D h-BN have undergone considerable development in van der Waals epitaxy of III-Nitride thin-films along with device fabrication and transfer onto various flexible and rigid substrates. The technique consists of a mechanical peeling-off of the epilayers from the native substrate, which allows a dry and fast release and transfer of optoelectronic and electronic III-N devices to arbitrary substrates. However, during the epitaxial growth and device fabrication of the epilayers, delaminations and cracks arise in the structures, which limits the size of crack-free devices to only a few hundreds of squared microns. The goal of this thesis is to develop new efficient, large-scale and low-cost new processes for heterogeneous integration of III-Nitride optoelectronic devices. These processes developed were used to fabricate lateral and vertical InGaN-based LEDs as well as nanopyramid-based InGaN solar cells grown on 2D h-BN. The outcomes of this thesis represent progress towards efficient, robust and low-cost 2D-hBN-assisted lift-off technology for heterogeneous integration of optoelectronic and electronic III-N devices.\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"New Processes for Heterogeneous Integration of III-Nitride Optoelectronic Devices: Application To InGaN-based Light Emitting Diodes and Solar Cells Grown on 2D h-BN "}],"uid":"28475","created_gmt":"2021-06-07 17:31:38","changed_gmt":"2021-06-07 17:31:38","author":"Daniela Staiculescu","boilerplate_text":"","field_publication":"","field_article_url":"","field_event_time":{"event_time_start":"2021-06-18T11:00:00-04:00","event_time_end":"2021-06-18T13:00:00-04:00","event_time_end_last":"2021-06-18T13:00:00-04:00","gmt_time_start":"2021-06-18 15:00:00","gmt_time_end":"2021-06-18 17:00:00","gmt_time_end_last":"2021-06-18 17:00:00","rrule":null,"timezone":"America\/New_York"},"extras":[],"groups":[{"id":"434381","name":"ECE Ph.D. Dissertation Defenses"}],"categories":[],"keywords":[{"id":"100811","name":"Phd Defense"},{"id":"1808","name":"graduate students"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[{"id":"1788","name":"Other\/Miscellaneous"}],"invited_audience":[{"id":"78771","name":"Public"}],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}}}