{"645276":{"#nid":"645276","#data":{"type":"event","title":"Ph.D. Dissertation Defense - Panni Wang","body":[{"value":"\u003Cp\u003E\u003Cstrong\u003ETitle\u003C\/strong\u003E\u003Cem\u003E:\u0026nbsp; \u003C\/em\u003E\u003Cem\u003EInvestigating ferroelectric and metal-insulator phase transition devices for neuromorphic computing\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003ECommittee:\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Shimeng Yu, ECE, Chair , Advisor\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Asif Khan, ECE\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Azad Naeemi, ECE\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Alan Doolittle, ECE\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Suman Datta, U of Notre Dame\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EAbstract:\u0026nbsp;\u003C\/strong\u003ENeuromorphic computing has been proposed to accelerate the computation for deep neural networks (DNNs). The objective of this thesis work is to investigate the ferroelectric and metal-insulator phase transition devices for neuromorphic computing. We proposed and experimentally demonstrated the drain erase scheme in FeFET to enable the individual cell program\/erase\/inhibition for in-situ training in 3D NAND-like FeFET array. We also identify a new challenge of ferroelectric partial switching, namely \u0026ldquo;history effect\u0026rdquo; in minor loop dynamics for multi-level states analog in-memory computing. We experimentally validated the history effect on FeCap and FeFET. A phase-field model was constructed to understand the origin. Apart from using FeFET as synaptic devices, using metal-insulator phase transition device, as neuron was also explored experimentally. A NbOx metal-insulator phase transition threshold switch was integrated at the edge of the crossbar array as oscillation neuron. One promising application for FeFET+NbOx neuromorphic system is to implement quantum error correction (QEC) circuitry at 4K. Cryo-NeuroSim, a device-to-system modeling framework that calibrates data at cryogenic temperature was developed to benchmark the performance of the FeFET+NbOx neuromorphic system.\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Investigating ferroelectric and metal-insulator phase transition devices for neuromorphic computing "}],"uid":"28475","created_gmt":"2021-03-12 14:02:58","changed_gmt":"2021-03-15 23:09:02","author":"Daniela Staiculescu","boilerplate_text":"","field_publication":"","field_article_url":"","field_event_time":{"event_time_start":"2021-03-23T14:30:00-04:00","event_time_end":"2021-03-23T16:30:00-04:00","event_time_end_last":"2021-03-23T16:30:00-04:00","gmt_time_start":"2021-03-23 18:30:00","gmt_time_end":"2021-03-23 20:30:00","gmt_time_end_last":"2021-03-23 20:30:00","rrule":null,"timezone":"America\/New_York"},"extras":[],"groups":[{"id":"434381","name":"ECE Ph.D. Dissertation Defenses"}],"categories":[],"keywords":[{"id":"100811","name":"Phd Defense"},{"id":"1808","name":"graduate students"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[{"id":"1788","name":"Other\/Miscellaneous"}],"invited_audience":[{"id":"78771","name":"Public"}],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}}}