Committee: 

Dr. Doolittle, Advisor    

Dr. Khan, Chair

Dr. Yu

Abstract: The object of the proposed research is to fabricate, characterize, and advance lithium niobite memristive devices for use in neuromorphic circuitry. As the von Neumann bottleneck continues to hinder performance scaling of silicon technology, memristive devices are being heavily researched as a neuromorphic solution.  The scalability of lithium niobite memristors for neuromorphic computing will be examined and improved upon by engineering the device architecture and by investigating the fundamental mechanisms providing memristive behavior and utilizing the resulting knowledge to augment memristive operation. The interaction between multiple lithium niobite memristors will be investigated for neuromorphic properties and applications.