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  <title><![CDATA[Ph.D. Proposal Oral Exam - Ming Jui Li]]></title>
  <body><![CDATA[<p><strong>Title:&nbsp; </strong><em>Ultra-dense 3D Heterogeneous Integration Interconnect and Assembly</em></p>

<p><strong>Committee:&nbsp; </strong></p>

<p>Dr. Bakir, Advisor</p>

<p>Dr. Brand, Chair</p>

<p>Dr. Frazier</p>

<p><strong>Abstract: </strong>The objective of the proposed research contains two parts. The first part of the research is about developing ALD Co bonding to achieve a wafer-level batch-bonding process that has a sub-micron I/O pitch, a low bonding temperature, a low surface- treatment requirement, and the capability for multi-pitch/multi-diameter. The second part of the research use low-temperature PECVD Si/SiO2 to encapsulate multiple chiplets and form reconstituted wafer to achieve a high density, wafer-level, BEOL-integrated, multi-tier stacked 3D fan-out wafer-level package (FOWLP).</p>
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