{"627538":{"#nid":"627538","#data":{"type":"news","title":"New growth technique enables dicing free pick-and-place of individual III-nitride optoelectronic devices","body":[{"value":"\u003Cp\u003EUMI researchers, led by Prof. Abdallah Ougazzaden, have demonstraded an innovative technology that can eliminate a costly step in the packaging of III-N optoelectronic devices. \u0026nbsp;III-N devices typically require dicing of the epitaxial materials to separate individual devices from each other. In this new technique, a pattern of SiO2 was fabricated on the sapphire substrate. Then h-BN was grown on the wafer. \u0026nbsp;The beauty of this this technique is the h-BN forms atomically flat layers on the exposed sapphire surface, while the h-BN on the SiO2 patterns was disordered. \u0026nbsp;Then\u0026nbsp;GaN-based\u0026nbsp;device epitaxy was performed. \u0026nbsp;Surprisingly, the h-BN on SiO2 did not permit subsequent growth of GaN-based materials, while the h-BN on Sapphire did permit growth of GaN-based devices. \u0026nbsp;So the GaN based devices were physically separated from each other, and they could be easily removed from the substrate because h-BN is not chemically bonded to the GaN-based device. This technology has the possibility of eliminating dicing steps during\u0026nbsp;III-N optoelectronic packaging by permitting convenient pick-and-place of individual devices on other substrates.\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EThis new technique uses a combination of van der Waals epitaxy of h-BN and selective area growth techniques that results in individual GaN-based devices such as LEDs, HEMT transistors, or solar cells\u0026nbsp;that can be easily removed from the sapphire substrate and placed on other supports. Given that GaN\u0026nbsp;and Sapphire are some of the hardest and strongest materials around, this is quite the trick!\u003C\/p\u003E\r\n","format":"limited_html"}],"field_summary_sentence":[{"value":"An innovative combination of h-BN and selective area growth has resulted in pick-and-place transfer of individual III-N devices without dicing."}],"uid":"34390","created_gmt":"2019-10-14 12:24:09","changed_gmt":"2019-10-14 12:29:07","author":"pvoss3","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2019-10-14T00:00:00-04:00","iso_date":"2019-10-14T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"627536":{"id":"627536","type":"image","title":"Pick-and-Place III-Nitride optoelectronic devices ","body":null,"created":"1571054971","gmt_created":"2019-10-14 12:09:31","changed":"1571054971","gmt_changed":"2019-10-14 12:09:31","alt":"","file":{"fid":"238932","name":"admt201970057-gra-0001-m.png","image_path":"\/sites\/default\/files\/images\/admt201970057-gra-0001-m.png","image_full_path":"http:\/\/hg.gatech.edu\/\/sites\/default\/files\/images\/admt201970057-gra-0001-m.png","mime":"image\/png","size":233438,"path_740":"http:\/\/hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/admt201970057-gra-0001-m.png?itok=Gb7ZGZN2"}}},"media_ids":["627536"],"related_links":[{"url":"https:\/\/doi.org\/10.1002\/admt.201970057","title":"Link to Advanced Materials Technologies Article"}],"groups":[{"id":"584910","name":"UMI2958"}],"categories":[],"keywords":[],"core_research_areas":[],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}}}