Entitled "MBE Growth of Metal Oxides for Complementary Memristive Applications," this paper details the manufacturing methods for a new electronic device that demonstrates for the first time both complementary (both n-type and p-type conduction) memristors, a technology similar in nature to CMOS silicon and the first demonstration of analog memristors. These advances may be useful in next generation neuromorphic computers, which are computing technologies that mimic mammal brain functionality. In addition, Georgia Tech recently filed a patent on this technology.

This was not the only award that Dr. Doolittle's group received at this conference. Michael Moseley also received the NAMBE Best Student Oral Presentation Award for both 2009 and 2010.