{"599430":{"#nid":"599430","#data":{"type":"event","title":"Ph.D. Proposal Oral Exam - Taha Ayari","body":[{"value":"\u003Cp\u003E\u003Cstrong\u003ETitle:\u0026nbsp; \u003C\/strong\u003E\u003Cem\u003EDesign ad Fabrication of Nitride-based Solar Cells and Intergration for Tandem Cell\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003ECommittee:\u0026nbsp; \u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Ougazzaden, Advisor\u0026nbsp;\u0026nbsp;\u0026nbsp;\u0026nbsp;\u0026nbsp;\u0026nbsp;\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Salvestrini, Chair\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Voss\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EAbstract: \u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe objective of the proposed research is to fabricate indium gallium nitride\/gallium nitride (InGaN\/GaN) photovoltaics devices grown on 2D hexagonal boron nitride (h-BN) by metal-organic vapor phase epitaxy (MOVPE) and their integration into InGaN\/Si tandem solar cells. Recent advances in epitaxial growth have led to the Van der Waals epitaxy of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which would allow III-N devices to be used more flexibly in a broader range of applications. The choice of the InN \u0026ndash; GaN material system for photovoltaics stems from its energy band gap stretching from 0.78-3.42 eV, which covers the entire visible spectrum. We have developed novel solutions to the problems of phase separation, v-pits, and low quality p-GaN and absorber regions which have resulted in the highest reported peak external quantum efficiency for III-nitride based solar cells. The development of a fabrication process for the InGaN-based solar cells has been also investigated and will be adapted for devices grown on 2D h-BN. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the devices to be mechanically lifted off from the sapphire substrate and directly integrated into an InGaN\/Si tandem solar cell. To limit the cracks formation during this step, an elastomeric stamp assisted transfer method will be applied.\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Design ad Fabrication of Nitride-based Solar Cells and Intergration for Tandem Cell"}],"uid":"28475","created_gmt":"2017-12-01 22:43:56","changed_gmt":"2017-12-01 22:43:56","author":"Daniela Staiculescu","boilerplate_text":"","field_publication":"","field_article_url":"","field_event_time":{"event_time_start":"2017-12-08T10:30:00-05:00","event_time_end":"2017-12-08T12:30:00-05:00","event_time_end_last":"2017-12-08T12:30:00-05:00","gmt_time_start":"2017-12-08 15:30:00","gmt_time_end":"2017-12-08 17:30:00","gmt_time_end_last":"2017-12-08 17:30:00","rrule":null,"timezone":"America\/New_York"},"extras":[],"groups":[{"id":"434371","name":"ECE Ph.D. Proposal Oral Exams"}],"categories":[],"keywords":[{"id":"102851","name":"Phd proposal"},{"id":"1808","name":"graduate students"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[{"id":"1788","name":"Other\/Miscellaneous"}],"invited_audience":[{"id":"78771","name":"Public"}],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}}}