{"592275":{"#nid":"592275","#data":{"type":"event","title":"Ph.D. Proposal Oral Exam - Mi-Hee Ji","body":[{"value":"\u003Cp\u003E\u003Cstrong\u003ETitle:\u0026nbsp; \u003C\/strong\u003E\u003Cem\u003EGrowth, Fabrication, and Characterization of III-nitride Semiconductors for High Performance Ultraviolet Avalanche Photodiodes by Metalorganic Chemical Vapor Deposition\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003ECommittee:\u0026nbsp; \u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Dupuis, Advisor\u0026nbsp;\u0026nbsp;\u0026nbsp;\u0026nbsp;\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Shen, Chair\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Yoder\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EAbstract: \u003C\/strong\u003EThe objective of the proposed research is to develop high-performance III-nitride-based ultraviolet (UV) p-i-n avalanche photodiodes (APDs) with high optical gain using metalorganic chemical vapor deposition (MOCVD) system. However, the realization of high-performance UV-APDs has been hampered by high dislocation densities originating from heteroepitaxial layer grown on the lattice-mismatched substrates, resulting in higher dark current density, device size limitation, and device failure by microplasma formation as well as low yield and non-uniformity in an array format. To solve this problem, I proposed material growth on bulk GaN substrates with low dislocation density and sophisticated device fabrication process including low-damage etching and high-quality dielectric passivation. The major aims of the work following: 1) to improve characteristics of Al0.05Ga0.95N p-i-n UV-APDs 2) to demonstrate uniform and reliable GaN p-i-n UV-APD arrays with large detection area.\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Growth, Fabrication, and Characterization of III-nitride Semiconductors for High Performance Ultraviolet Avalanche Photodiodes by Metalorganic Chemical Vapor Deposition"}],"uid":"28475","created_gmt":"2017-05-31 19:49:48","changed_gmt":"2017-05-31 19:49:48","author":"Daniela Staiculescu","boilerplate_text":"","field_publication":"","field_article_url":"","field_event_time":{"event_time_start":"2017-06-14T10:00:00-04:00","event_time_end":"2017-06-14T12:00:00-04:00","event_time_end_last":"2017-06-14T12:00:00-04:00","gmt_time_start":"2017-06-14 14:00:00","gmt_time_end":"2017-06-14 16:00:00","gmt_time_end_last":"2017-06-14 16:00:00","rrule":null,"timezone":"America\/New_York"},"extras":[],"groups":[{"id":"434371","name":"ECE Ph.D. Proposal Oral Exams"}],"categories":[],"keywords":[{"id":"102851","name":"Phd proposal"},{"id":"1808","name":"graduate students"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[{"id":"1788","name":"Other\/Miscellaneous"}],"invited_audience":[{"id":"78771","name":"Public"}],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}}}