{"255281":{"#nid":"255281","#data":{"type":"news","title":"Local tuning of graphene thickness on 4H-SiC C-face using decomposing silicon nitride masks","body":[{"value":"\u003Cp\u003EAuthors:\u0026nbsp; \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Puybaret_R\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003ERenaud Puybaret\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Hankinson_J\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EJohn Hankinson\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Ougazzaden_A\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EAbdallah Ougazzaden\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Voss_P\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EPaul L Voss\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Berger_C\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EClaire Berger\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Heer_W\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EWalt A de Heer\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003EPatterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon nitride mask prior to graphitization. In our process we find that areas covered by a Si-rich SiN mask have three more layers than non-masked areas. Conversely N-rich SiN decreases the thickness by three layers. In both cases the mask decomposes before graphitization is completed. Graphene grown in masked areas show good quality as observed by Raman, AFM and transport data. By tailoring the growth parameters selective graphene growth has been obtained.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EPatterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon nitride mask prior to graphitization.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon nitride mask prior to graphitization."}],"uid":"27428","created_gmt":"2013-11-15 15:23:13","changed_gmt":"2016-10-08 03:15:22","author":"Gina Adams","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2013-07-23T00:00:00-04:00","iso_date":"2013-07-23T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"257351":{"id":"257351","type":"image","title":"Local tuning of graphene thickness on 4H-SiC C-face using decomposing silicon nitride masks","body":null,"created":"1449243856","gmt_created":"2015-12-04 15:44:16","changed":"1475894938","gmt_changed":"2016-10-08 02:48:58","alt":"Local tuning of graphene thickness on 4H-SiC C-face using decomposing silicon nitride masks","file":{"fid":"198252","name":"article5.jpg","image_path":"\/sites\/default\/files\/images\/article5_0.jpg","image_full_path":"http:\/\/hg.gatech.edu\/\/sites\/default\/files\/images\/article5_0.jpg","mime":"image\/jpeg","size":54825,"path_740":"http:\/\/hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/article5_0.jpg?itok=PSpoPM3W"}}},"media_ids":["257351"],"related_links":[{"url":"http:\/\/arxiv.org\/abs\/1307.6197","title":"http:\/\/arxiv.org\/abs\/1307.6197"}],"groups":[{"id":"60783","name":"MRSEC"}],"categories":[{"id":"42941","name":"Art Research"}],"keywords":[{"id":"429","name":"graphene"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}}}