{"255261":{"#nid":"255261","#data":{"type":"news","title":"Highly efficient spin transport in epitaxial graphene on SiC","body":[{"value":"\u003Cp\u003EAuthors:\u0026nbsp; \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Dlubak_B\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EBruno Dlubak\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Martin_M\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EMarie-Blandine Martin\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Deranlot_C\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003ECyrile Deranlot\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Servet_B\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EBernard Servet\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Xavier_S\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003ESt\u00e9phane Xavier\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Mattana_R\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003ERichard Mattana\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Sprinkle_M\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EMike Sprinkle\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Berger_C\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EClaire Berger\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Heer_W\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EWalt A. De Heer\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Petroff_F\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EFr\u00e9d\u00e9ric Petroff\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Anane_A\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EAbdelmadjid Anane\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Seneor_P\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EPierre Seneor\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Fert_A\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EAlbert Fert\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003ESpin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer\/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting\/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 {\\mu}m. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003ESpin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer\/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"We report here on highly efficient spin transport in two-terminal polarizer\/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide"}],"uid":"27428","created_gmt":"2013-11-15 15:19:56","changed_gmt":"2016-10-08 03:15:22","author":"Gina Adams","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2013-07-07T00:00:00-04:00","iso_date":"2013-07-07T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"257361":{"id":"257361","type":"image","title":"Highly ef\ufb01cient spin transport in epitaxial graphene on SiC","body":null,"created":"1449243856","gmt_created":"2015-12-04 15:44:16","changed":"1475894938","gmt_changed":"2016-10-08 02:48:58","alt":"Highly ef\ufb01cient spin transport in epitaxial graphene on SiC","file":{"fid":"198253","name":"article6.jpg","image_path":"\/sites\/default\/files\/images\/article6_0.jpg","image_full_path":"http:\/\/hg.gatech.edu\/\/sites\/default\/files\/images\/article6_0.jpg","mime":"image\/jpeg","size":87864,"path_740":"http:\/\/hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/article6_0.jpg?itok=EcndA56X"}}},"media_ids":["257361"],"related_links":[{"url":"http:\/\/arxiv.org\/abs\/1307.1555","title":"http:\/\/arxiv.org\/abs\/1307.1555"}],"groups":[{"id":"60783","name":"MRSEC"}],"categories":[{"id":"42941","name":"Art Research"}],"keywords":[{"id":"9116","name":"epitaxial graphene"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}}}