Ph.D. Dissertation Defense - Yunyi Gong

Event Details
  • Date/Time:
    • Wednesday December 2, 2020
      11:00 am - 1:00 pm
  • Location: https://bluejeans.com/443548870
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Summaries

Summary Sentence: Radio Frequency and Millimeter Wave Circuit Component Design with SiGe BiCMOS Technology

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TitleRadio Frequency and Millimeter Wave Circuit Component Design with SiGe BiCMOS Technology

Committee:

Dr. John Cressler, ECE, Chair , Advisor

Dr. Farrokh Ayazi, ECE

Dr. Hua Wang, ECE

Dr. Shaolan Li, ECE

Dr. Taiyun Chi, Rice University

Abstract: The objective of this research is to study and leverage the unique properties and advantages of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) integrated circuit technologies to better design radio frequency (RF) and millimeter wave (mm-wave) circuit components. With recent developments, the high yield and modest cost silicon-based semiconductor technologies have proven to be attractive and cost-effective alternatives to high-performance III-V technology platforms. Between SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology and advanced RF complementary metal-oxide-semiconductor (CMOS) technology, the fundamental device-level differences between SiGe HBTs and field-effect transistors (FETs) grant SiGe HBTs clear advantages as well as unique design concerns. The work presented in this dissertation identifies several advantages and challenges on design using SiGe HBTs and provides design examples that exploit and address these unique benefits and problems with circuit component designs using SiGe HBTs.

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In Campus Calendar
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ECE Ph.D. Dissertation Defenses

Invited Audience
Public
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Other/Miscellaneous
Keywords
Phd Defense, graduate students
Status
  • Created By: Daniela Staiculescu
  • Workflow Status: Published
  • Created On: Nov 17, 2020 - 5:08pm
  • Last Updated: Nov 17, 2020 - 5:08pm