Title:  High performance III-nitride ultraviolet avalanche photodetectors

Committee: 

Dr. Dupuis, Advisor       

Dr. Shen, Chair

Dr. Otte

Abstract: The objective of the proposed research is to develop III-nitride UV avalanche photodiodes capable of Geiger mode operation at room temperature and above. The following section is an introduction to the III-nitride material properties and the MOCVD growth system. Then, the development of photomultiplier tubes, silicon avalanche photodiodes, silicon carbide avalanche photodiodes and gallium nitride avalanche photodiode will be discussed, along with the Geiger mode approach employed for these materials. Preliminary experiments done so far and the experimental results will be presented. These include the fabrication of the GaN p-I-N APD sample structure, device characterization of I-V characteristics and spectral responsivity, and Geiger mode measurement. Geiger mode measurement section consists of circuit and optical parts of the measurement setup, and principles of measurement.In the last section, the future work that needs to be done will be proposed, which are development of deep ultraviolet APD, low dark count rate and high photon detection efficiency study of UV photodetectors.