Interface between GaN and diamond materials

Interface between GaN and diamond materials

Cross-section bright-field high-resolution STEM images of GaN-diamond interfaces bonded by the surface activated bonding technique. (Credit: Zhe Cheng, Georgia Tech)

Additional Information

Groups

Research Horizons

Categories
Research, Engineering, Military Technology
Keywords
Gallium nitride, GaN, diamond, bonding, wide bandgap, HEMT
Status
  • Created By: John Toon
  • Workflow Status: Published
  • Created On: Mar 16, 2020 - 8:45am
  • Last Updated: Mar 16, 2020 - 8:45am