Graphene Journal Club - Oct 29 - 1pm

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  • Date/Time:
    • Friday October 29, 2010
      12:00 pm - 2:00 pm
  • Location: Georgia Tech - Nanotechnology Building, 1st floor
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Summary Sentence: Transfer of graphene grown on SiC to other substrates

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Here we report a technique for transferring graphene layers, one by one, from a multilayer deposit formed by epitaxial growth on the Si-terminated face of a 6H-SiC substrate. The procedure uses a bilayer film of palladium/polyimide deposited onto the graphene coated SiC, which is then mechanically peeled away and placed on a target substrate. Orthogonal etching of the palladium and polyimide leaves isolated sheets of graphene with sizes of square centimeters. Repeating these steps transfers additional sheets from the same SiC substrate.

Raman spectroscopy, scanning tunneling spectroscopy, low-energy electron diffraction and X-ray photoelectron spectroscopy, together with scanning tunneling, atomic force, optical, and scanning electron microscopy reveal key properties of the materials. The sheet resistances determined from measurements of four point probe devices were found to be configurations demonstrate the versatility of the procedures.

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Student sponsored
epitaxial graphene, graphene, MRSEC Journal Club
  • Created By: Gina Adams
  • Workflow Status: Published
  • Created On: Oct 6, 2010 - 10:41am
  • Last Updated: Oct 7, 2016 - 9:52pm