Ph.D. Proposal Oral Exam - Brian Wier

Event Details
  • Date/Time:
    • Tuesday December 12, 2017
      10:00 am - 12:00 pm
  • Location: Room 530, TSRB
  • Phone:
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    N/A
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Summaries

Summary Sentence: Modeling and Design of Silicon-Germanium Heterojunction Bipolar Transistors for Reliability-aware Circuit Design

Full Summary: No summary paragraph submitted.

Title:  Modeling and Design of Silicon-Germanium Heterojunction Bipolar Transistors for Reliability-aware Circuit Design

Committee: 

Dr. Cressler, Advisor    

Dr. Shen, Chair

Dr. Yoder

Abstract:

The objective of the proposed research is to analyze the mechanisms of breakdown and aging in SiGe HBTs such that the deliverable, reliable performance of high-frequency SiGe HBT circuits and systems can be maximized. The anticipated results of this study will be the enablement of reliable higher power operation in SiGe HBT technologies through the design of novel superjunction collector devices, an enhanced understanding of device degradation under transient and RF stress conditions, and the development of device aging compact models to be incorporated in a circuit design environment.

Additional Information

In Campus Calendar
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Groups

ECE Ph.D. Proposal Oral Exams

Invited Audience
Public
Categories
Other/Miscellaneous
Keywords
Phd proposal, graduate students
Status
  • Created By: Daniela Staiculescu
  • Workflow Status: Published
  • Created On: Nov 27, 2017 - 3:37pm
  • Last Updated: Dec 4, 2017 - 5:24pm