Jiahui Yuan has been selected for a 2008 IEEE Electron Devices Society Ph.D. Student Fellowship. The EDS Ph.D. Fellowship Program was established to promote, recognize, and support graduate study and research within the Society's field of interest and is highly competitive. The fellowship will be presented at the 2008 IEEE International Electron Devices Meeting (IEDM) in December in San Francisco.

As a member of ECE Professor John Cressler's Silicon-Heterostructure Devices and Circuits research team, Jiahui's research focuses on the detailed understanding of the fundamental scaling issues of SiGe heterojunction bipolar transistors (HBTs), and to date centers on two areas: 1) using operating temperature a tuning knob for both enhancing performance to better define the ultimate speed limits of such devices, as well as uncovering new device physics phenomena in these operating temperature extremes; and 2) defining a viable scaling path towards TeraHertz (THz = 1,000 GHz) bandwidth in SiGe HBTs. THz electronics is a newly emergent research thrust in the electronics community, with numerous envisioned applications in the high mm-wave and THz imaging and communications areas.