news
Highly efficient spin transport in epitaxial graphene on SiC
Primary tabs
Authors: Bruno Dlubak, Marie-Blandine Martin, Cyrile Deranlot, Bernard Servet, Stéphane Xavier, Richard Mattana, Mike Sprinkle, Claire Berger, Walt A. De Heer, Frédéric Petroff, Abdelmadjid Anane, Pierre Seneor, Albert Fert
Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 {\mu}m. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.
Groups
Status
- Workflow Status:Published
- Created By:Gina Adams
- Created:11/15/2013
- Modified By:Fletcher Moore
- Modified:10/07/2016
Categories
Keywords