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Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

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The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high {\kappa} dielectric T-gate and self-aligned contacts, further contributed to the record-breaking fmax.

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  • Workflow Status:Published
  • Created By:Gina Adams
  • Created:11/15/2013
  • Modified By:Fletcher Moore
  • Modified:10/07/2016

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