Speaker for September 10: Hang Chen, Georgia Tech Institute for Electronics and Nanotechnology: Plasma Etching at IEN: An Overview of Equipment and Processes
Abstract: Plasma etching has become one of the most important techniques in IC fabrication. It plays a critical role in creating geometries of extremely small size for highly integrated devices. Plasma etching techniques utilize plasma created from appropriate gas mixtures and RF excitation to remove surface material physically or chemically (or both) from a substrate. Plasma etching can be categorized by the material as metal etching, silicon etching and dielectric etching, or it can be categorized by the technology as electron cyclotron resonance (ECR), reactive ion etching (RIE) or inductively coupled ion (ICP).

Dr. Hang Chen received his bachelor and master degrees in chemistry from Fudan University in Shanghai, China.  He obtained his doctorate, also in chemistry, from Georgia Tech in 2005 and was a post-doc at the Nanotechnology Research Center before joining the IEN as a Research Scientist in 2008.   His research interests include chemically sensitive field-effect transistors, MEMS-CMOS device integration, and organic electronics.

The Georgia Tech Institute for Electronics and Nanotechnology (IEN) cleanrooms provide various types of plasma etching equipment to satisfy different processing needs. Each tool has its own unique characteristics and serves different purposes. In this seminar, a brief introduction to the equipment and etching capabilities of the IEN will be presented. Common processing issues related to plasma etching will also be discussed.

Nano@Tech

Sharing Our Knowledge, Shaping the Future

Nano@Tech is an organization comprised of professors, graduate students and undergraduate students from the Georgia Tech and Emory campuses and professionals from the corresponding scientific community who are interested in Nanotechnology. Meetings are held on the second and fourth Tuesday of the month at noon, during the academic year. Each meeting is held in the Marcus Nanotechnology Building conference rooms (rooms 1116-1118).